high voltage transistor npn silicon maximum ratings rating symbol value unit collectoremitter voltage v ceo 400 vdc collectorbase voltage v cbo 500 vdc emitterbase voltage v ebo 6.0 vdc collector current e continuous i c 300 madc total device dissipation @ t a = 25 c derate above 25 c p d 625 5.0 mw mw/ c total device dissipation @ t c = 25 c derate above 25 c p d 1.5 12 watts mw/ c operating and storage junction temperature range t j , t stg 55 to +150 c thermal characteristics characteristic symbol max unit thermal resistance, junction to ambient r ja 200 c/w thermal resistance, junction to case r jc 83.3 c/w electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collectoremitter breakdown voltage (1) (i c = 1.0 madc, i b = 0) v (br)ceo 400 e vdc collectoremitter breakdown voltage (i c = 100 m adc, v be = 0) v (br)ces 500 e vdc collectorbase breakdown voltage (i c = 100 adc, i e = 0) v (br)cbo 500 e vdc emitterbase breakdown voltage (i e = 10 adc, i c = 0) v (br)ebo 6.0 e vdc collector cutoff current (v cb = 400 vdc, i e = 0) i cbo e 0.1 m adc collector cutoff current (v ce = 400 vdc, v be = 0) i ces e 500 nadc emitter cutoff current (v eb = 4.0 vdc, i c = 0) i ebo e 0.1 m adc 1. pulse test: pulse width 300 s, duty cycle 2.0%. preferred devices are on semiconductor recommended choices for future use and best overall value. on semiconductor ? semiconductor components industries, llc, 2001 march, 2001 rev. 1 1 publication order number: mpsa44/d mpsa44 on semiconductor preferred device case 2911, style 1 to92 (to226aa) 1 2 3 collector 3 2 base 1 emitter
mpsa44 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) (continued) characteristic symbol min max unit on characteristics (1) dc current gain (1) (i c = 1.0 madc, v ce = 10 vdc) (i c = 10 madc, v ce = 10 vdc) (i c = 50 madc, v ce = 10 vdc) (i c = 100 madc, v ce = 10 vdc) h fe 40 50 45 40 e 200 e e e collectoremitter saturation voltage (1) (i c = 1.0 madc, i b = 0.1 madc) (i c = 10 madc, i b = 1.0 madc) (i c = 50 madc, i b = 5.0 madc) v ce(sat) e e e 0.4 0.5 0.75 vdc baseemitter saturation voltage (i c = 10 madc, i b = 1.0 madc) v be(sat) e 0.75 vdc smallsignal characteristics output capacitance (v cb = 20 vdc, i e = 0, f = 1.0 mhz) c obo e 7.0 pf input capacitance (v eb = 0.5 vdc, i c = 0, f = 1.0 mhz) c ibo e 130 pf smallsignal current gain (i c = 10 madc, v ce = 10 vdc, f = 20 mhz) h fe 1.0 e e 1. pulse test: pulse width 300 s, duty cycle 2.0%.
mpsa44 http://onsemi.com 3 i c , collector current (ma) figure 1. dc current gain 160 20 1.0 h fe , dc current gain i b , base current ( m a) figure 2. collector saturation region v ce , collector-emitter voltage (volts) 0.5 0.3 0 10 10 k 300 t a = 25 c i c = 1.0 ma 30 100 1.0 k 3.0 k 50 k i c , collector current (ma) figure 3. aono voltages v, voltage (volts) 1.0 0 0.1 30 t a = 25 c v be(on) @ v ce = 10 v v ce(sat) @ i c /i b = 10 3.0 10 100 v be(sat) @ i c /i b = 10 0.3 300 2.0 5.0 10 20 50 200 300 140 60 100 120 t a = 125 c 25 c -55 c v ce = 10 v 0.4 0.2 0.1 i c = 10 ma 1.0 0.8 0.6 0.4 0.2 80 40 100 i c = 50 ma v ce , collector voltage (volts) 10 i c , collector current (ma) 20 50 figure 4. active region e safe operating area current limit thermal limit second breakdown limit 300 200 100 20 10 1.0 100 200 500 100 m s 1.0 ms t a = 25 c 1000 valid for duty cycle 10% 1.0 s t c = 25 c mpsa44 c, capacitance (pf) figure 5. capacitance reverse bias (volts) 100 30 10 3.0 1.0 0.5 0.3 100 t a = 25 c f = 1.0 mhz c ib 300 1.0 2.0 5.0 10 20 50 c ob |h fe |, small-signal current gain 10 3.0 2.0 1.5 1.0 0.1 30 3.0 10 0.3 100 1.0 0.2 figure 6. high frequency current gain i c , collector current (ma) v ce = 10 v f = 10 mhz t a = 25 c 1.0 2.0 5.0 2.0
mpsa44 http://onsemi.com 4 i c , collector current (ma) figure 7. turnon switching times and test circuit 10 0.1 1.0 i c , collector current (ma) figure 8. turnoff switching times and test circuit 3.0 10 30 50 5.0 0.2 1.0 2.0 0.5 100 t, time (s) m t, time (s) m 10 0.1 1.0 3.0 10 30 50 5.0 0.2 1.0 2.0 0.5 100 *total shunt capacitance or test jig and connectors. v cc = 150 v i c /i b = 10 t a = 25 c v be(off) = 4.0 vdc t r t d v cc = 150 v i c /i b = 10 t a = 25 c t s t f +9.7 v -4.0 v 0 v in pw = 50 m s duty cycle = 2.0% v cc r l v out c s 4.0 pf* r b v in -11.4 v +10.7 v v in pw = 50 m s duty cycle = 2.0% v cc r l v out c s 4.0 pf* r b v in
mpsa44 http://onsemi.com 5 package dimensions case 2911 issue al to92 (to226) notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j l b k g h section xx c v d n n xx seating plane dim min max min max millimeters inches a 0.175 0.205 4.45 5.20 b 0.170 0.210 4.32 5.33 c 0.125 0.165 3.18 4.19 d 0.016 0.021 0.407 0.533 g 0.045 0.055 1.15 1.39 h 0.095 0.105 2.42 2.66 j 0.015 0.020 0.39 0.50 k 0.500 --- 12.70 --- l 0.250 --- 6.35 --- n 0.080 0.105 2.04 2.66 p --- 0.100 --- 2.54 r 0.115 --- 2.93 --- v 0.135 --- 3.43 --- 1 style 1: pin 1. emitter 2. base 3. collector
mpsa44 http://onsemi.com 6 notes
mpsa44 http://onsemi.com 7 notes
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